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ST 2SC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
TO-92 Plastic Package Weight approx. 0.19g
Value 35 30 4 50 10 300 125 -55 to +125
Unit V V V mA mA mW
O
C C
O
Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group R O Y Symbol hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Cob Gpe Min. 40 70 120 100 27 Typ. 2 30 Max. 80 140 240 0.1 0.1 0.4 1 400 3.2 33 Unit A A V V MHz pF dB
Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 1 mA Output Capacitance at VCB = 10 V, f = 1 MHz Power Gain at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 06/05/2006
ST 2SC2715
10
Ic[mA], COLLECTOR CURRENT
I B=90 A I B=80 A
h FE, DC CURRENT GAIN
1000
VCE=12V
8 6 4 2 0 0 2 4 6
I B=70 A I B=60 A I B=50 A I B=40 A I B=30 A I B=20 A I B=10 A
100
8
10
10 0.1 1 10 100
I C[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
VBE(sat) , VCE(sat) [ V ] , SATURATION VOLTAGE
Figure 2. DC Current Gain
10
Ic=10I B
Ic[mA], COLLECTOR CURRENT
32 28 24 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VCE=12V
1
VBE(sat)
0.1
VCE(sat)
0.01 0.1
1
10
Ic[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage
Figure 4. Base-Emitter On Voltage
fT [ MHz ] , CURRENT GAIN BANDWIDTH PRODUCT
10
Cob [ pF ] , CAPACITANCE
1000 VCE=10V
f=1MHz I E=0
1
100
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
10
1
10
I C[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 06/05/2006

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